1214-300V r1 microsemi corp. reserves the right to make changes without further notice. to verify the current version please check our web site at www. microsemi.com or contact our factory direct. microsemi corp. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 /869-2324 general description the 1214-300V is an internally matched, common base transistor capable of providing 300 watts of pulsed rf output power at three hundred thirty microseconds pulse width, ten percent duty factor across the band 1200 to 1400 mhz. this hermetically solder-sealed transistor is specifically designed for l-band radar applications. it utilizes gold metallization and diffused emitter ballasting to provide high reliability and supreme ruggedness. case outline 55st, style 1 absolute maximum ratings maximum power dissipation @ 25 o c 420 watts maximum voltage and current bvces collector to emitter voltage 75 volts bvebo emitter to base voltage 3.0 volts ic collector current 20 amps maximum temperatures storage temperature - 65 to + 200 o c operating junction temperature + 200 o c rf electrical characteristics @ 25 o c symbol characteristics test conditions min typ max units pout pg ? c rl droop flatness vswr-s vswr-t power out power gain collector efficiency input return loss droop flatness load mismatch stability load mismatch tolerance freq = 1200 C 1400 mhz vcc = 50 volts pin = 40 watts pulse width = 330 s duty factor = 10% 300 8.75 50 10 55 410 0.5 1. 0 1.5:1 2.5:1 watts db % db db db note: test @ 1.2, 1.3, and 1.4 ghz. functional characteristics @ 25 c bvces ices ? jc 1 collector to emitter breakdown collector to emitter leakage thermal resistance ic = 100 ma vce = 50 volts rated pulse condition 75 10 0.29 volts ma o c/w 1214-300V 300 watts - 50 volts, 330 s, 10% radar 1200 - 1400 mhz downloaded from: http:///
1214-300V r1 microsemi corp. reserves the right to make changes without further notice. to verify the current version please check our web site at www. microsemi.com or contact our factory direct. microsemi corp. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 /869-2324 typical performance curves: 1214-300V pin vs. pout 0 50 100 150 200 250 300 350 400 450 500 0 1 02 03 04 05 06 0 pin (w) pout (w) 1200 mhz 1300 mhz 1400 mhz 1214-300V pin vs. eff 0.0 10.0 20.0 30.0 40.0 50.0 60.0 70.0 0 1 02 03 04 05 06 0 pin (w) eff (%) 1200 mhz 1300 mhz 1400 mhz 1214-300V pin vs. gain 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 0 1 02 03 04 05 06 0 pin (w) gain (db) 1200 mhz 1300 mhz 1400 mhz impedance information impedance freq zs zl 1200 1.28-j2 4.24-j9.03 1300 1.27-j1.41 2.1-j3.4 1400 1.29-j0.87 1.86-j2.56 1214-300V board material rt 6010.2 lm 25 mil downloaded from: http:///
1214-300V r1 microsemi corp. reserves the right to make changes without further notice. to verify the current version please check our web site at www. microsemi.com or contact our factory direct. microsemi corp. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 /869-2324 broadband test circuit 1214-300V downloaded from: http:///
1214-300V r1 microsemi corp. reserves the right to make changes without further notice. to verify the current version please check our web site at www. microsemi.com or contact our factory direct. microsemi corp. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 /869-2324 1214-300V downloaded from: http:///
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